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供应AM4599C
1：
Low rLow rDS(on)DS(on) trench technologytrench technology
2：
Low thermal impedanceLow thermal impedance
3：
Fast switching speedFast switching speed
4：
N & P-Channel 60-V (D-S) MOSFET
产品信息
PRODUCT SUMMARY
VDS (V) rDS(on) (mΩ) ID(A)
35 @ VGS = 10V 7.7
60
Key Features:Key Features: 50 @ VGS = 4.5V 6.5
•• Low rLow rDS(on)DS(on) trench technologytrench technology -60 57 @ VGS = -10V -5.0
•• Low thermal impedanceLow thermal impedance 77 @ VGS = -4.5V -4.3
•• Fast switching speedFast switching speed
Typical Applications:Typical Applications:
•• White LED boost convertersWhite LED boost converters
•• Automotive SystemsAutomotive Systems
•• Industrial DC/DC Conversion CircuitsIndustrial DC/DC Conversion Circuits
ABSOLUTE MAXIMUM RATINGS (T = 25°C UNLESS OTHERWISE NOTED)
A
Parameter Symbol Nch Limit Pch Limit Units
Drain-Source Voltage VDS 60 -60
V
Gate-Source Voltage VGS ±20 ±20
T =25°C 7.7 -4.3
Continuous Drain Current a A ID
T =70°C 6.5 -3.9 A
A
Pulsed Drain Current b IDM 60 -60
Continuous Source Current (Diode Conduction) a IS 3 -2.9 A
T =25°C 2.1 2.1
Power Dissipation a A PD W
T =70°C 1.3 1.3
A
Operating Junction and Storage Temperature Range T , T -55 to 150 °C
J stg
THERMAL RESISTANCE RATINGS
Parameter Symbol Maximum Units
t <= 10 sec 62.5
Maximum Junction-to-Ambient a RθJA °C/W
Steady State 110
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
VDS (V) rDS(on) (mΩ) ID(A)
35 @ VGS = 10V 7.7
60
Key Features:Key Features: 50 @ VGS = 4.5V 6.5
•• Low rLow rDS(on)DS(on) trench technologytrench technology -60 57 @ VGS = -10V -5.0
•• Low thermal impedanceLow thermal impedance 77 @ VGS = -4.5V -4.3
•• Fast switching speedFast switching speed
Typical Applications:Typical Applications:
•• White LED boost convertersWhite LED boost converters
•• Automotive SystemsAutomotive Systems
•• Industrial DC/DC Conversion CircuitsIndustrial DC/DC Conversion Circuits
ABSOLUTE MAXIMUM RATINGS (T = 25°C UNLESS OTHERWISE NOTED)
A
Parameter Symbol Nch Limit Pch Limit Units
Drain-Source Voltage VDS 60 -60
V
Gate-Source Voltage VGS ±20 ±20
T =25°C 7.7 -4.3
Continuous Drain Current a A ID
T =70°C 6.5 -3.9 A
A
Pulsed Drain Current b IDM 60 -60
Continuous Source Current (Diode Conduction) a IS 3 -2.9 A
T =25°C 2.1 2.1
Power Dissipation a A PD W
T =70°C 1.3 1.3
A
Operating Junction and Storage Temperature Range T , T -55 to 150 °C
J stg
THERMAL RESISTANCE RATINGS
Parameter Symbol Maximum Units
t <= 10 sec 62.5
Maximum Junction-to-Ambient a RθJA °C/W
Steady State 110
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature